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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Khan, A. Seongmo Hwang Lowder, J. Adivarahan, V. Fareed, Q. |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Electrical Engineering, University of South Carolina, Columbia, 29208, USA (Khan, A.; Seongmo Hwang; Lowder, J.) || Nitek Inc., 1804 Salem Church Road, Irmo, SC 29063, USA (Adivarahan, V.; Fareed, Q.) |
| Abstract | AlGaN based deep ultraviolet light emitting diodes (DUV LEDs) are key components in systems for air, water, and food purification and germicidal applications. Because of the heteroepitaxial growth of the DUV LED epilayers on sapphire, they have a large number of dislocations that invariably leads to a reduction of quantum efficiency and lifetime degradation. In this paper, we present our recent work at developing DUV LEDs with different device geometries, which includes a new micro-pixel electrode arrangement. This arrangement was used to study mechanisms responsible for their degradation. The micro-pixel device geometry with some new packaging schemes led to DUV LEDs with emission at 280 nm and lifetimes well in excess of 3000 hours. In this paper experimental details and the results of our study are presented. |
| Starting Page | 89 |
| Ending Page | 93 |
| File Size | 306328 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424428885 |
| ISSN | 15417026 |
| DOI | 10.1109/IRPS.2009.5173229 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-04-26 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum gallium nitride Light emitting diodes Geometry Quantum well devices Purification Thermal degradation Substrates Temperature Buffer layers Thermal conductivity lifetime degradation UV-LEDs micro-pixel hetero-epitaxy |
| Content Type | Text |
| Resource Type | Article |
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