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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Masuduzzaman, M. Islam, A.E. Alam, M.A. |
| Copyright Year | 2009 |
| Description | Author affiliation: Dept. of ECE, Purdue University, West Lafayette, IN-47907, USA (Masuduzzaman, M.; Islam, A.E.; Alam, M.A.) |
| Abstract | Multi-frequency Charge Pumping (MFCP) is a widely used technique to characterize bulk trap distribution, N(x,E), within the SiO/high-κ dielectric. Thus far, the theoretical interpretation of MFCP has either been based on uncritical generalization of the classical CP theory of electron-hole recombination or has been interpreted as a ‘quasi-geometrical’ component of CP current. Moreover, the recent literature contains variants of the basic MFCP that attempts to rectify various perceived limitations of the ‘other’ MFCP methods. Yet, without a comprehensive theoretical study supported by detailed numerical model of charging/ discharging dynamics during the MFCP process, it is impossible to establish the relative merits of these techniques, let alone the accuracy of back-extracted N(x,E) by these methods. In this paper, we (i) present a physically-based numerical framework to establish that I in long, medium and short channel (L) transistors should be understood in a fundamentally different way — none of which can be interpreted by simple generalization of the classical CP theory, (ii) compare and contrast N(x,E), back-extracted from different variants of MFCP (e.g., amplitude-sweep, base-level sweep, etc.) for NMOS transistors, and (iii) show that, regardless of the combination of the chosen parameters of V (e.g., frequency: ƒ hi/low voltage levels: V; high/low pulse duration: t; rise/fall time: t), the back-extracted N can only be attributed to certain patches within position-energy space, but not to unique x and/or E points. Therefore, other complementary methods must be used for a unique definition of N(x,E) within the modern gate dielectrics. |
| Starting Page | 13 |
| Ending Page | 20 |
| File Size | 660528 |
| Page Count | 8 |
| File Format | |
| ISBN | 9781424428885 |
| ISSN | 15417026 |
| DOI | 10.1109/IRPS.2009.5173218 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-04-26 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Physics Charge pumps Electron traps Frequency Stress Spontaneous emission Numerical models High-K gate dielectrics Temperature Leakage current trap profiling Bulk trap charge pumping high-k dielectric |
| Content Type | Text |
| Resource Type | Article |
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