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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zahid, M.B. Degraeve, R. Cho, M. Pantisano, L. Aguado, D.R. Van Houdt, J. Groeseneken, G. Jurczak, M. |
| Copyright Year | 2009 |
| Description | Author affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium (Zahid, M.B.; Degraeve, R.; Cho, M.; Pantisano, L.; Aguado, D.R.; Van Houdt, J.; Groeseneken, G.; Jurczak, M.) |
| Abstract | A Variable T Amplitude Charge Pumping $(VT^{2}ACP)$ is used to profile defect in the SiO and Al separately in Flash Memory based devices. It is shown that by independently controlling the pulse low timing “discharging time” and high level timing “charging time”, the contribution of interface and bulk Al traps can be separated. By using the ellipsometry and the measured intersection time t to trap in the high- k (∼60 μs), SiO thickness of 0.87 nm and scanning rate of 0.19nm/dec is found. Using a slanted wafer, the result shows that in the case of thin SiO (∼1nm) the trap density close to the substrate (short t) is one order of magnitude higher compared to thick SiO (∼3nm). For t = 1.7nm all traps are in the SiO or SiO transition layer. Only for the thickest SiO layers (2.7 and 3 nm) the trap density becomes low and constant. Additionally WKB-approximation is used to calculate the filling probability of the traps (f), the modeled scanning rate nearly doubles to ∼0.29 nm/dec and 0.27 nm/dec for amorphous and crystalline, respectively. In summary, the method of trap energy/depth profiling by using $VT^{2}ACP$ allows scanning from ∼0.5nm up to 1.2nm in depth and 0.1 to 0.7eV in energy range above the $E^{Si}$ band depending on sample used. The results show that there exist significant interaction between SiO and Al when processed with PDA 1000°C. For amorphous Al (PDA 700°C) the impact of the precursor is not reflected in the SiO trap density while for crystalline Al no increase in trap density at 0.3eV above the $E^{Si}$ band is observed. |
| Starting Page | 21 |
| Ending Page | 25 |
| File Size | 315781 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424428885 |
| ISSN | 15417026 |
| DOI | 10.1109/IRPS.2009.5173219 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-04-26 |
| Publisher Place | Canada |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Timing Amorphous materials Crystallization Charge pumps Flash memory Ellipsometry Current measurement Charge measurement Thickness measurement Time measurement |
| Content Type | Text |
| Resource Type | Article |
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