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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Wu, J.W. You, J.W. Ma, H.C. Cheng, C.C. Hsu, C.F. Huang, G.W. Chang, C.S. Tahui Wang |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan (Wu, J.W.; You, J.W.; Ma, H.C.; Cheng, C.C.; Hsu, C.F.) |
| Abstract | The abnormal increase of low frequency flicker noise in analog n-MOSFETs with gate oxide, in the valence band tunneling domain, is investigated. In 15/spl Aring/ oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at a positive gate voltage and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi Fermi-levels. The trap capture and emission times in the valence band tunneling domain are extracted from random telegraph signals. The dependence of measured trap times on gate voltage is consistent with our proposed model. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Reliability Soc |
| Starting Page | 260 |
| Ending Page | 264 |
| File Size | 760963 |
| Page Count | 5 |
| File Format | |
| ISBN | 0780388038 |
| DOI | 10.1109/RELPHY.2005.1493095 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-04-17 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low-frequency noise Degradation MOSFET circuits Tunneling Electron traps 1f noise Frequency domain analysis Charge carrier processes Telegraphy Noise measurement |
| Content Type | Text |
| Resource Type | Article |
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