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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rauch III, S.E. La Rosa, G. |
| Copyright Year | 2005 |
| Description | Author affiliation: Semicond. R&D Center, IBM Microelectron., Hopewell Junction, NY, USA (Rauch, S.E., III; La Rosa, G.) |
| Abstract | As NMOSFET size and voltage are scaled down, the electron energy distribution becomes increasingly dependent only on the applied bias, because of quasi-ballistic transport over the high field region. A new paradigm of NMOSFET hot carrier behavior is proposed here, in which the fundamental driving force is available energy, rather than peak lateral electric field as it is in the lucky electron model (LEM.) This approach allows an experimental determination of S/sub IT/ (the interface state generation cross section) as a function of electron energy. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Reliability Soc |
| Starting Page | 708 |
| Ending Page | 709 |
| File Size | 395078 |
| Page Count | 2 |
| File Format | |
| ISBN | 0780388038 |
| DOI | 10.1109/RELPHY.2005.1493216 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-04-17 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Hot carrier effects Hot carriers Knee Voltage Electrons Scattering Interface states Impact ionization Tin |
| Content Type | Text |
| Resource Type | Article |
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