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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Black, J.R. |
| Copyright Year | 2005 |
| Description | Author affiliation: Motorola Inc., Phoenix, AZ, USA (Black, J.R.) |
| Abstract | A failure mode commonly found in high power devices and integrated circuits appears when aluminum conductors carry current densities in excess of 10/sup 5/ amperes per square centimeter at temperatures above 100/spl deg/C. The mode of failure is an open circuit which often is observed as a "crack" in the aluminum and is commonly referred to as "cracked stripe" or "disappearing aluminum." This paper presents a study of this failure mode which has been identified with the mass transport of aluminum by momentum exchange between activated aluminum ions and conducting electrons. The activation energy for the reaction has been obtained and equations relating temperature, current density and film structure to conductor life are presented. The activation energy appears to be identical to that for the lattice self-diffusion of aluminum modified by factors involving both surface diffusion and grain-boundary diffusion. These latter two factors are important in films formed by the condensation of aluminum vapor. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Reliability Soc |
| Starting Page | 1 |
| Ending Page | 6 |
| File Size | 1128078 |
| Page Count | 6 |
| File Format | |
| ISBN | 0780388038 |
| DOI | 10.1109/RELPHY.2005.1493053 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-04-17 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Aluminum Electrons Current density Temperature Crystallization Physics Conductors Conductive films Integrated circuit reliability Equations |
| Content Type | Text |
| Resource Type | Article |
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