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| Content Provider | IEEE Xplore Digital Library | 
|---|---|
| Author | Kwon Hong Deok-Sin Kil Hyun-Kyung Woo Joosung Kim Han-Sang Song Ki-Seon Park Seung-Jin Yeom Hong-Seon Yang Jae-Sung Roh Hyun-Chul Sohn Jin-Woong Kim Sung-Wook Park | 
| Copyright Year | 2005 | 
| Description | Author affiliation: R&D Div., Hynix Semicond. Inc., Kyoungki-do, South Korea (Kwon Hong; Deok-Sin Kil; Hyun-Kyung Woo; Joosung Kim; Han-Sang Song; Ki-Seon Park; Seung-Jin Yeom; Hong-Seon Yang; Jae-Sung Roh; Hyun-Chul Sohn; Jin-Woong Kim; Sung-Wook Park) | 
| Abstract | In order to verify the package reliability of a MIM HAO capacitor module, mass production 256M DDR processes with 0.1 /spl mu/m design rule were adopted. The capacitor dielectrics used were HAH and Hf/sub x/Al/sub y/O/sub z/ and showed Tox.eq of 12/spl Aring/ and Lc of<0.2 fA/cell, respectively. With proper thermal compensation for adjusting the cell Vt, we could get a high probe test yield, and high package yield when a MIM HAO capacitor was introduced instead of an SIS Al/sub 2/O/sub 3/ capacitor. With package samples, the refresh time of the device did not degrade after IR and EFR stresses, and finally, we could confirm the reliability of MIM HAO capacitors at package level through long term operation lifetime testing. | 
| Sponsorship | IEEE Electron Devices Soc. IEEE Reliability Soc | 
| Starting Page | 686 | 
| Ending Page | 687 | 
| File Size | 375613 | 
| Page Count | 2 | 
| File Format | |
| ISBN | 0780388038 | 
| DOI | 10.1109/RELPHY.2005.1493205 | 
| Language | English | 
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Publisher Date | 2005-04-17 | 
| Publisher Place | USA | 
| Access Restriction | Subscribed | 
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Subject Keyword | MIM capacitors Random access memory Packaging Probes Dielectrics Life testing Mass production Tin Wafer scale integration Thermal degradation | 
| Content Type | Text | 
| Resource Type | Article | 
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