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Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wu, Jun-Wei You, Jian-Wen Ma, Huan-Chi Cheng, Chih-Chang Hsu, Chang-Feng Chang, Chih-Sheng Huang, Gou-Wei Wang, Tahui |
| Copyright Year | 2005 |
| Abstract | Low-frequency flicker noise in analog n-MOSFETs with 15-/spl Aring/ gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model. |
| Starting Page | 2061 |
| Ending Page | 2066 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Volume Number | 52 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/13303/1/000231542100019.pdf |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
