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Content Provider | IEEE Xplore Digital Library |
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Author | Tanaka, Y. Takatsuka, A. Yatsuo, T. Arai, K. Yano, K. |
Copyright Year | 2010 |
Description | Author affiliation: Interdisciplinary Graduate School of Medical and Engineering, Yamanashi University, 4-3-11 Takeda, Kofu, Yamanashi, Japan (Yano, K.) || Energy Semiconductor Electronics Research Laboratory, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, Japan (Tanaka, Y.; Takatsuka, A.; Yatsuo, T.) || Research and Innovation Promotion Office, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki, Japan (Arai, K.) |
Abstract | We succeeded to fabricate SiC buried gate static induction transistors (BGSITs) with the current rating of 35 A at the power density of 200 $W/cm^{2}.$ The saturation current exceeded 130 A. The breakdown voltage V and the on-resistance Rn were 1200 V at the gate voltage V of −2.5 V and 26 mΩ at V of +2.5 V, respectively. The blocking gain of 480 was greatly improved compared with our previous work (∼100) due to the optimization of the fabrication process, especially related to the channel formation. Considering the active area A of 6.76 $mm^{2},$ we calculated the specific on-resistance R as 1.8 mΩ- $cm^{2},$ which is a lowest one among the SiC switching devices with V>1200 V that have been reported up to now except our previous report on small chip BGSIT (A=0.853 $mm^{2}).$ The leakage current was less than $10^{−7}$ A at the drain voltage of 1000 V at room temperature and increased by only one order of magnitude at 200°C. The R increased from 26 mil at RT to 74 ma at 200°C. |
Starting Page | 357 |
Ending Page | 360 |
File Size | 443029 |
Page Count | 4 |
File Format | |
ISBN | 9781424477180 |
ISSN | 19460201 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-06-06 |
Publisher Place | Japan |
Access Restriction | Subscribed |
Rights Holder | Inst of Elec Eng of Japan |
Subject Keyword | Silicon carbide JFETs Fabrication MOSFETs FETs Laboratories Electronics industry Textile industry Voltage Power semiconductor devices |
Content Type | Text |
Resource Type | Article |
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