NDLI: Normally-off operation of Al/GaN MOSFET based on AlGaN/GaN heterostructure with p-GaN buffer layer

Content Provider	IEEE Xplore Digital Library
Author	Dong-Seok Kim Jong-Bong Ha Sung-Nam Kim Eun-Hwan Kwak Sung-Gil Lee Sung-Gil Lee Jong-Sub Lee Ki-Sik Im Ki-Won Kim Jung-Hee Lee
Copyright Year	2010
Description	Author affiliation: School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu, Republic of Korea (Dong-Seok Kim; Jong-Bong Ha; Sung-Nam Kim; Eun-Hwan Kwak; Sung-Gil Lee; Sung-Gil Lee; Jong-Sub Lee; Ki-Sik Im; Ki-Won Kim; Jung-Hee Lee)
Abstract	An AlGaN/GaN-based normally-off GaN MOSFET with p-GaN buffer layer has been demonstrated, for the first time, using over-recessed gate. It is believed that p-GaN buffer layer has advantage of not only increasing the threshold voltage due to depletion effect, but also reducing the buffer leakage current. The fabricated GaN MOSFET with 30 nm-thick ALD Al as the gate insulator exhibited good device performances, such as a maximum drain current of 109 mA/mm, a maximum extrinsic transconductance of 30 mS/mm, a low specific on-resistance of 1.86 mn-cm2, and a subthreshold slope of 365 mV/dec with threshold voltage of 2.9 V.
Starting Page	229
Ending Page	231
File Size	732968
Page Count	3
File Format	PDF
ISBN	9781424477180
ISSN	19460201
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Inst of Elec Eng of Japan
Subject Keyword	Gallium nitride Aluminum gallium nitride MOSFET circuits Buffer layers Aluminum oxide Threshold voltage Power MOSFET Leakage current Etching Insulation
Content Type	Text
Resource Type	Article

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