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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Peftitsis, D. Tolstoy, G. Antonopoulos, A. Rabkowski, J. Jang-Kwon Lim Bakowski, M. Angquist, L. Nee, H.-P. |
| Copyright Year | 2010 |
| Description | Author affiliation: Electrical Machines and Power Electronics Lab (EME), School of Electrical Engineering, Royal Institute of Technology (KTH), Teknikringen 33, Se-10044 Stockholm, Switzerland (Peftitsis, D.; Tolstoy, G.; Antonopoulos, A.; Rabkowski, J.; Jang-Kwon Lim; Bakowski, M.; Angquist, L.; Nee, H.-P.) |
| Abstract | This paper studies the possibility of building a Modular Multilevel Converter (M2C) using Silicon Carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the sub-modules of a down-scaled 10 kVA prototype M2C is replaced with a sub-module with SiC JFETs without anti-parallel diodes. It is shown that diode-less operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC sub-module verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99,8 % if equipped with future 3.3 kV 1.2 kA SiC JFETs. |
| Starting Page | 2148 |
| Ending Page | 2155 |
| File Size | 832508 |
| Page Count | 8 |
| File Format | |
| ISBN | 9781424452866 |
| DOI | 10.1109/ECCE.2010.5618274 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-09-12 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | High Voltage Direct-Current Transmission Modular Multilevel Converter Silicon carbide Capacitors Prototypes Converters Silicon Silicon Carbide JFETs Diode-less operation MOSFETs SiC JFETs |
| Content Type | Text |
| Resource Type | Article |
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