NDLI: Optimizing oxide charge balanced devices for Unclamped Inductive Switching (UIS)

Content Provider	IEEE Xplore Digital Library
Author	Yedinak, J. Probst, D. Dolny, G. Challa, A. Andrews, J.
Copyright Year	2010
Description	Author affiliation: Fairchild Semiconductor Corporation, Salt Lake City, Utah USA (Probst, D.; Challa, A.; Andrews, J.) \|\| Fairchild Semiconductor Corporation, Wilkes Barre, PA USA (Yedinak, J.; Dolny, G.)
Abstract	Power MOSFET designs have been moving to higher performance particularly in the medium voltage area. (60V to 300V) New designs require lower Specific On-resistance while not sacrificing Unclamped Inductive Switching (UIS) capability or increasing turn-off losses. Two charge balance technologies currently address these needs, the PN junction and the Shielded Gate Charge Balance device topologies. This paper will study the impact of drift region as well as other design parameters that influence the shielded gate class of charge balance devices. The optimum design for maximizing UIS capability and minimizing the impact on other design parameters such as R and switching performance are addressed. It will be shown through TCAD simulation one can design devices to have a stable avalanche point that is not influenced by small variations within a die or die-to-die that result from normal processing. Finally, measured and simulated data will be presented showing a fabricated device with near theoretical UIS capability.
Starting Page	333
Ending Page	336
File Size	795656
Page Count	4
File Format	PDF
ISBN	9781424477180
ISSN	19460201
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Inst of Elec Eng of Japan
Subject Keyword	MOSFET circuits Voltage Doping Medical simulation Silicon Power semiconductor switches Contact resistance Costs Power semiconductor devices Design optimization
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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