NDLI: Carrier lifetime control optimization for high speed IGBT based on electrical and physical analysis

Content Provider	IEEE Xplore Digital Library
Author	Tadokoro, C. Kaneda, M. Kiyoi, A. Kusunoki, S. Kurokawa, H.
Copyright Year	2010
Description	Author affiliation: Advanced Technology R&D Center, Mitsubishi Electric Corporation, Imajuku-higashi 1-1-1, Nishi-ku, Fukuoka city, Fukuoka, 819-0161, Japan (Kiyoi, A.; Kurokawa, H.) \|\| Power Device Works, Mitsubishi Electric Corporation, Imajuku-higashi 1-1-1, Nishi-ku, Fukuoka city, Fukuoka, 819-0161, Japan (Tadokoro, C.; Kaneda, M.; Kusunoki, S.)
Abstract	It is well know for IGBT to utilize an Electron Beam (EB) irradiation and a post thermal annealing process as a carrier lifetime control for a thick n-drift layer. The stability of the electrical characteristic such as the ON state forward voltage drop Von as V(sat) and a turn-off loss (Eoff) is required from the viewpoint of reliability for both an economical small chip size in a high current density operation and a shortened carrier lifetime to reduce an Eoff in a high speed operation. In this paper, we report the complex combination effects of carrier lifetime control processes and a DC current stress, which simulated an entire lifetime of device usage under high current density conduction, by both the IGBT's electrical characteristics stability and a physical analysis using the Cathode Luminescence (CL) method.
Starting Page	145
Ending Page	148
File Size	503843
Page Count	4
File Format	PDF
ISBN	9781424477180
ISSN	19460201
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Inst of Elec Eng of Japan
Subject Keyword	Charge carrier lifetime Insulated gate bipolar transistors Electric variables Current density Electron beams Annealing Thickness control Stability Voltage Stress control
Content Type	Text
Resource Type	Article

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