NDLI: A novel 4H-SiC IGBT structure with improved trade-off between short circuit capability and on-state voltage drop

Content Provider	IEEE Xplore Digital Library
Author	Woongje Sung Huang, A.Q. Baliga, B.J.
Copyright Year	2010
Description	Author affiliation: Future Renewable Electric Energy Delivery and Management (FREEDM) Systems Center, North Carolina State University, Raleigh, NC 27695, USA (Woongje Sung; Huang, A.Q.; Baliga, B.J.)
Abstract	A novel IGBT structure with a built-in lateral JFET region is proposed to reduce the saturation current. A low saturation current level for high voltage IGBTs is desirable for strong short circuit capability. The saturation current can be reduced by increasing the cell pitch of the conventional IGBT structure at the sacrifice of increased on-state voltage drop. The proposed structure provides a greatly improved tradeoff between saturation current and forward voltage drop. Furthermore, reduced saturation current in the IGBT limits the reverse recovery current of the freewheeling diode without substantial increase of the turn-on energy loss at reduced di/dt and prevents the snappiness of the diode during reverse recovery. In this paper, the viability of the new structure is demonstrated using 15kV 4H-SiC devices by 2-D simulations. The proposed new structure can also be applied to devices in other materials and other voltage ratings.
Starting Page	217
Ending Page	220
File Size	192310
Page Count	4
File Format	PDF
ISBN	9781424477180
ISSN	19460201
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-06
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Inst of Elec Eng of Japan
Subject Keyword	Insulated gate bipolar transistors Circuits Voltage Temperature Thermal resistance Semiconductor diodes Energy loss Conducting materials Thermal conductivity Current density
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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