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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yoshida, S. Jiang Li Takehara, H. Kambayashi, H. Ikeda, N. |
| Copyright Year | 2006 |
| Description | Author affiliation: Yokohama R&D Labs., Furukawa Electr. Co., Ltd, Yokohama (Yoshida, S.; Jiang Li; Takehara, H.; Kambayashi, H.; Ikeda, N.) |
| Abstract | We performed an AlGaN/GaN Schottky barrier diode (SBD) with a high breakdown voltage of over 1000V on Si (111) substrate. An AlGaN/GaN heterostructure without any crack was realized on a Si (111) substrate using a metalorganic chemical vapor deposition (MOCVD). We also fabricated an AlGaN/GaN heterojunction field effect transistor (HFET) using an AlGaN/GaN heterostructure on a Si (111) substrate. The fabrication process was the same as SBD. The gate length and width were 2000 nm and 0.4 mm, respectively. The distance of gate and drain was 15000 nm. The off-state breakdown voltage of the HFET was over 1050V |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 2188000 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780397142 |
| DOI | 10.1109/ISPSD.2006.1666135 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-04 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication Aluminum gallium nitride Gallium nitride HEMTs MODFETs Schottky barriers Schottky diodes Chemical vapor deposition MOCVD Heterojunctions |
| Content Type | Text |
| Resource Type | Article |
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