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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Daliento, S. Mele, L. Spirito, P. Gialanella, L. Romano, M. Limata, B.N. Carta, R. Bellemo, L. |
| Copyright Year | 2006 |
| Description | Author affiliation: Dip. di Ingegneria Elettronica e delle Tlc, Universita di Napoli "Federico II" (Daliento, S.; Mele, L.; Spirito, P.) |
| Abstract | In this paper, a study of the effects on both lifetime and resistivity, induced by helium implantation processes, is presented. A wide range of implantation energies (from 3.5 MeV to 5.8 MeV) and doses (from $1middot10^{8}$ $atm/cm^{2}$ to 2middot1011 $atm/cm^{2})$ is considered and, for each of them, the resistivity profile and the lifetime profile are measured and compared with that of the unprocessed material. Moreover, the temperature dependence of that profile is analysed in the usual operation range of power devices. Results show that a high helium dose not only reduces the recombination lifetime but significatively affects the resistivity too. The temperature dependence of the two parameters is such that they play different roles at high or low temperature |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 3651154 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780397142 |
| DOI | 10.1109/ISPSD.2006.1666094 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-04 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Helium Silicon Conductivity Temperature dependence Temperature distribution Performance evaluation Temperature measurement Electronic mail Shape Lattices resistivity lifetime defects |
| Content Type | Text |
| Resource Type | Article |
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