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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Min-Woo Ha Seung-Chul Lee Joong-Hyun Park Jin-Cherl Her Kwang-Seok Seo Min-Koo Han |
| Copyright Year | 2006 |
| Description | Author affiliation: Sch. of Electr. Eng., Seoul Nat. Univ. (Min-Woo Ha; Seung-Chul Lee; Joong-Hyun Park; Jin-Cherl Her; Kwang-Seok Seo; Min-Koo Han) |
| Abstract | A new inductively coupled plasma-chemical vapor deposition (ICP-CVD) $SiO_{2}$ passivation for high voltage switching AlGaN/GaN high electron mobility transistors (HEMTs) is proposed to increase the breakdown voltage and the forward drain current. AlGaN/GaN HEMTs are fabricated and measured before and after $SiO_{2}$ passivation. The measured off-state breakdown voltage of $SiO_{2}$ passivated device is 455 V, whereas that of the unpassivated device is 238 V. The surface leakage current of AlGaN/GaN HEMTs are decreased due to $SiO_{2}$ passivation. The forward drain currents of SiO2 passivated devices are increased by 20 %~35 % because two-dimensional electron gas (2DEG) charge is increased and the electron injections to the surface traps are decreased. $SiO_{2}$ passivation is more suitable for high voltage switching AlGaN/GaN HEMTs than $Si_{3}N_{4}$ passivation due to a high breakdown voltage and a low leakage current |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 3787515 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780397142 |
| DOI | 10.1109/ISPSD.2006.1666098 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-04 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon compounds Passivation Aluminum gallium nitride Gallium nitride HEMTs MODFETs Plasma measurements Breakdown voltage Leakage current Electrons |
| Content Type | Text |
| Resource Type | Article |
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