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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nakamura, K. Hisamoto, Y. Matsumura, T. Minato, T. Moritani, J. |
| Copyright Year | 2006 |
| Description | Author affiliation: Power Device Works, Mitsubishi Electr. Corp., Fukuoka (Nakamura, K.; Hisamoto, Y.; Matsumura, T.; Minato, T.; Moritani, J.) |
| Abstract | We have done research for the purpose of improving of total performance of 1200V light punch-through (LPT) IGBTs that utilizing carrier stored trench-gate bipolar transistor (CSTBTtrade). This paper reports that the total loss can be dramatically improved by a vertical shrink of LPT-CSTBT to a structure with a thin N drift and a new backside collector layer possessed of both reinforced N buffer and lengthened carrier lifetime. The new LPT-CSTBT demonstrates lower on-state voltage $(V_{CE(sat)}),$ lower turn-off loss (EOFF ), lower junction leakage current (@398 ~ 423K) than that of the conventional one presented in ISPSD'02. Our results show, for the first time, that the proposed new collector structure is much more effective as a collector one because of making it positive to choose any position in the trade-off characteristic between $V_{CE(sat)}$ and $E_{OFF}$ without utilizing any conventional carrier lifetime technique. From the viewpoint of low total loss and choosing widely characteristic position in the $V_{CE(sat)}$ and $E_{OFF}$ trade-off curve, the new LPT-CSTBT with new LPT technology is a promising candidate for high voltage power device |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 4659428 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780397142 |
| DOI | 10.1109/ISPSD.2006.1666089 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-04 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Insulated gate bipolar transistors Charge carrier lifetime Voltage Doping profiles Leakage current Temperature Performance loss Bipolar transistors Annealing Ion implantation |
| Content Type | Text |
| Resource Type | Article |
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