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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rupp, R. Treu, M. Voss, S. Bjork, F. Reimann, T. |
| Copyright Year | 2006 |
| Description | Author affiliation: Infineon Technol., Munich (Rupp, R.) |
| Abstract | A new commercially available SiC diode is reported and key features like widely improved surge current capability and avalanche ruggedness are described and related to the merged pn/Schottky device structure. The clearly positive temperature coefficient of the avalanche allows high avalanche power dissipation in the range of 20W/mm2 even in the frame of long term (1000h) testing. Additionally the device has the same excellent dynamic properties as already known from pure SiC Schottky diodes. The dV/dt ruggedness of the device was also proven with a long term test (3.6E11 cycles with > 90V/ns). No noticeable difference in switching losses occur when the device is switched off from nominal current at room temperature or from 10times nominal current at 150-C. The long term stability of the device under bipolar operation at high current densities (> $2kA/cm^{2})$ at the p-areas was proven over a stress time of 1h |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 4797353 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780397142 |
| DOI | 10.1109/ISPSD.2006.1666123 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-06-04 |
| Publisher Place | Italy |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon carbide Schottky diodes Testing Surges Temperature distribution Power dissipation Switching loss Stability Current density Stress |
| Content Type | Text |
| Resource Type | Article |
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