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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Arulkumaran, S. |
| Copyright Year | 2007 |
| Description | Author affiliation: Nanyang Technol. Univ., Singapore (Arulkumaran, S.) |
| Abstract | AlGaN/GaN high-electron-mobility transistors (HEMTs) were successfully fabricated on high- resistivity (HR) Silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using $Si_{3}N_{4}$ dielectric layer grown by plasma enhanced chemical vapor deposition. The device direct-current current-voltage $(I_{DS}-V_{DS})$ characteristics, pulsed $I_{DS}-V_{DS}$ characteristics, microwave small-signal and large-signal characteristics were studied before and after passivation. An enhancement of drain current $(I_{D})$ density and the extrinsic transconductance was observed for the devices with full $Si_{3}N_{4}$ passivation. An improvement of $f_{T},$ $f_{max}$ and device output power $(P_{out})$ was also observed after surface passivation. A new evaluation method implemented to identify the $I_{D}$ collapse related traps from AlGaN/GaN HEMTs. More than 80% of $I_{D}$ collapse suppression and 80% of increase in $P_{out}$ were observed in AlGaN/GaN HEMTs by $Si_{3}N_{4}$ passivation. The $P_{out}$ increase in AlGaN/GaN HEMTs by surface passivation is in good agreement with the $I_{D}$ collapse suppression in AlGaN/GaN HEMTs by surface passivation. |
| Starting Page | 317 |
| Ending Page | 322 |
| File Size | 899342 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781424417278 |
| DOI | 10.1109/IWPSD.2007.4472507 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-16 |
| Publisher Place | India |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | AlGaN/GaN HEMTs current collapse Dielectric substrates pulse measurements Conductivity Gallium nitride MODFETs Plasma chemistry Plasma properties high-temperature power HEMTs Silicon Si3N4 passivation Aluminum gallium nitride Passivation |
| Content Type | Text |
| Resource Type | Article |
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