NDLI: Variations of hole mass in p-MOSFETs under process-induced mechanical stress

Content Provider	IEEE Xplore Digital Library
Author	Guillaume, T. Mouis, M.
Copyright Year	2005
Description	Author affiliation: IMEP, UMR, Grenoble, France (Guillaume, T.; Mouis, M.)
Abstract	The influence of stress on transport properties in p-MOSFETs is rather well known for the case of biaxially strained channels obtained using heteroepitaxy. However, results concerning biaxial stress do not apply for other stress configurations. For the stress-engineering of sub-45 nm devices, simplified models of the valence-band structure are required which can predict the variation of electrical performances for any stress configuration and channel orientation. In this work, we use the analytical formulation of a 6 /spl times/ 6 k.p strained Hamiltonian to derive transport parameters for holes in the cases of both tensile and compressive, [110] uniaxial and [001] biaxial stresses. Our calculations are found to be in strong agreement with previous results obtained using more intensive computations, and we show that the hole mobility variations experimentally observed in strained p-MOSFETs can be explained by the stress-induced changes of the highly anisotropic conductivity masses of holes.
Starting Page	289
Ending Page	292
File Size	1662682
Page Count	4
File Format	PDF
ISBN	0780392035
DOI	10.1109/ESSDER.2005.1546642
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Tensile stress Silicon Compressive stress Conductivity Anisotropic magnetoresistance Predictive models Heterojunction bipolar transistors Capacitive sensors Piezoresistance
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Influence of contact positioning on the performance of stress induced MOSFETs

Pressure sensors on base of bipolar silicon strain sensitive transistors

Modelling of anisotropic conductivity in strained n-silicon

Effect of Process and Layout on Strain Enhancement from Dual Stress Liners

Uniaxial strain effects on silicon nanowire pMOSFET and single-hole transistor at room temperature

Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs

18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface

Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

Anisotropy of the piezojunction effect in silicon transistors

Variations of hole mass in p-MOSFETs under process-induced mechanical stress

Similar Documents

Influence of contact positioning on the performance of stress induced MOSFETs

Pressure sensors on base of bipolar silicon strain sensitive transistors

Modelling of anisotropic conductivity in strained n-silicon

Effect of Process and Layout on Strain Enhancement from Dual Stress Liners

Uniaxial strain effects on silicon nanowire pMOSFET and single-hole transistor at room temperature

Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs

18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface

Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

Anisotropy of the piezojunction effect in silicon transistors

Variations of hole mass in p-MOSFETs under process-induced mechanical stress