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Physics and modeling of Ge-on-insulator MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Chin, A. Kao, H.L. Tseng, Y.Y. Yu, D.S. Chen, C.C. McAlister, S.P. Chi, C.C.
Copyright Year	2005
Description	Author affiliation: Dept. of Electron. Eng., NCTU, Hsinchu, Taiwan (Chin, A.; Kao, H.L.; Tseng, Y.Y.; Yu, D.S.; Chen, C.C.)
Abstract	We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state I/sub ds/ leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.
Starting Page	285
Ending Page	288
File Size	233897
Page Count	4
File Format	PDF
ISBN	0780392035
DOI	10.1109/ESSDER.2005.1546641
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Physics MOSFETs Analytical models Medical simulation Effective mass Photonic band gap Leakage current Predictive models Radio frequency Performance gain
Content Type	Text
Resource Type	Article

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