NDLI: A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

Content Provider	IEEE Xplore Digital Library
Author	Brederlow, R. Jeongwook Koh Thewes, R.
Copyright Year	2005
Description	Author affiliation: Infineon Technol. AG, Munich, Germany (Brederlow, R.)
Abstract	In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation presented in I. Bloom et al. (1991), P. Dierickx et al. (1992), E. A. M. Klumperink et al. (2000), H. Tian et al. (2001) and J. S. Kolhatkar et al. (2004). These observations can become very relevant for analog and RF circuit design as stated in E. A. M. Klumperink et al. (2000) and J. Koh et al. (2004). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.
Starting Page	333
Ending Page	336
File Size	514419
Page Count	4
File Format	PDF
ISBN	0780392035
DOI	10.1109/ESSDER.2005.1546653
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low-frequency noise MOSFETs Voltage Circuit noise Semiconductor device modeling CMOS technology Physics Radio frequency Noise level Autocorrelation
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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