NDLI: Anisotropy of the piezojunction effect in silicon transistors

Content Provider	IEEE Xplore Digital Library
Author	Creemer, J.F. French, P.J.
Copyright Year	2002
Description	Author affiliation: DIMES, Delft Univ. of Technol., Netherlands (Creemer, J.F.)
Abstract	Mechanical stress influences the saturation current of a bipolar transistor by means of the piezojunction effect. This effect can therefore serve to detect stress in micromachined sensors. It has recently been modelled for the relatively low stress levels occurring in those sensors. With the use of this model, the first-order stress sensitivity of the most common transistors can be analysed. It appears that the sensitivity of vertical transistors in both {100} and {111} wafers is isotropic with respect to the stress orientation. However, the sensitivity of lateral transistors is strongly anisotropic on these wafers. This fact is visualised by a number of polar plots.
Sponsorship	IEEE
Starting Page	316
Ending Page	319
File Size	284320
Page Count	4
File Format	PDF
ISBN	0780371852
ISSN	10846999
DOI	10.1109/MEMSYS.2002.984266
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-01-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anisotropic magnetoresistance Silicon Piezoresistance Tensile stress Bipolar transistors Mechanical sensors Equations Semiconductor device modeling Instruments Visualization
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering

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