NDLI: Extraction of physical parameters of strained silicon MOSFETs from C-V measurement

Content Provider	IEEE Xplore Digital Library
Author	Chandrasekaran, K. Xing Zhou Siau Ben Chiah Wangzuo Shangguan Guan Huei See Bera, L.K. Balasubramanian, N. Rustagi, S.C.
Copyright Year	2005
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore (Chandrasekaran, K.; Xing Zhou; Siau Ben Chiah; Wangzuo Shangguan; Guan Huei See)
Abstract	This paper presents a methodology for extraction of the physical parameters of strained-silicon MOSFET from one capacitance-voltage (C-V) measurement based on physics-based compact model and conventional C-V characterization techniques. The extracted physical parameters (such as strained-silicon layer thickness and doping as well as conduction band offset) are used to create a numerical (Medici) device structure, from which the simulated C-V data is compared with the measured data as well as that from the compact model (Xsim), which validates the extraction technique. The proposed approach provides a simple yet physical means to probe into strained-silicon MOSFFET structures useful for characterize and model these devices, which are emerged as promising candidates for the enhancement and extension to conventional bulk-Si CMOS technology.
Starting Page	521
Ending Page	524
File Size	241641
Page Count	4
File Format	PDF
ISBN	0780392035
DOI	10.1109/ESSDER.2005.1546699
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon MOSFETs Capacitance-voltage characteristics Semiconductor process modeling Data mining Semiconductor device modeling CMOS technology Capacitance measurement Doping Medical simulation
Content Type	Text
Resource Type	Article

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