NDLI: UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Content Provider	IEEE Xplore Digital Library
Author	Samsudin, K. Cheng, B. Brown, A.R. Roy, S. Asenov, A.
Copyright Year	2005
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Glasgow Univ., UK (Samsudin, K.; Cheng, B.; Brown, A.R.; Roy, S.; Asenov, A.)
Abstract	Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Ultra thin body (UTB) SOI MOSFETs are expected to replace conventional MOSFETs for integrated memory applications due to superior electrostatic integrity and better resistant to some of the sources of intrinsic parameter fluctuations. To fully realise the performance benefits of UTB SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuation information into the compact model is developed. The impact on 6T SRAM static noise margin characteristics of discrete random dopants in the source/drain regions and body-thickness variations has been investigated for well scaled devices with physical channel length in the range of 10nm to 5nm. A comparison with the behaviour of a 6T SRAM based on a conventional 35nm MOSFET is also presented.
Starting Page	553
Ending Page	556
File Size	409389
Page Count	4
File Format	PDF
ISBN	0780392035
DOI	10.1109/ESSDER.2005.1546708
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Stability Fluctuations MOSFETs CMOS technology Electrostatics Immune system Circuit simulation Semiconductor process modeling Circuit noise
Content Type	Text
Resource Type	Article

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Abstract sub-25 nm utb soi sram cell under the influence of discrete random dopants (2006).

Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells

Impact of Intrinsic Parameter Fluctuations on SRAM Cell Design

Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling

Asenov a. Impact of body thickness fluctuation in nanometre scale utb soi mosfets on sram cell functionality. In: sixth european conference on ultimate integration of silicon (ulis (2005).

Variability analysis for sub-100 nm PD/SOI CMOS SRAM cell

Process-variation- and random-dopant-induced static noise margin fluctuation in nanoscale CMOS and FinFET SRAM cells

The impact of intrinsic device fluctuations on CMOS SRAM cell stability

Asenov a. Utb soi sram cell stability under the influence of intrinsic parameter fluctuation. In: 35th european solid-state device research conference (essderc (2005).

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

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Abstract sub-25 nm utb soi sram cell under the influence of discrete random dopants (2006).

Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells

Impact of Intrinsic Parameter Fluctuations on SRAM Cell Design

Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling

Asenov a. Impact of body thickness fluctuation in nanometre scale utb soi mosfets on sram cell functionality. In: sixth european conference on ultimate integration of silicon (ulis (2005).

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UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation