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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Deok-Sin Kil Kwon Hong Seung-Jin Yeom Han-Sang Song Ki-Seon Park Jae-Sung Roh Noh-Jung Kwak Hyun-Cheol Sohn Jin-Woong Kim Sung-Wook Park |
| Copyright Year | 2005 |
| Description | Author affiliation: R & D Div., Hynix Semicond. Inc., Kyoungki-Do, South Korea (Deok-Sin Kil; Kwon Hong; Seung-Jin Yeom; Han-Sang Song; Ki-Seon Park; Jae-Sung Roh; Noh-Jung Kwak; Hyun-Cheol Sohn; Jin-Woong Kim; Sung-Wook Park) |
| Abstract | New concept of capacitor dielectric thin film was successfully demonstrated through graded Hf/sub x/Al/sub y/O/sub z/ dielectric thin film accompanied by post ozone annealing for the application to DRAM capacitor. MIM capacitor with graded Hf/sub x/Al/sub y/O/sub z/ dielectric films showed drastically reduced leakage current and highly improved breakdown voltage by 0.45-0.75V maintaining the same EOT value. In the case of graded film with Hf/Al=1.5/1, EOT showed very small value of 12.3/spl Aring/ and leakage current could be maintained as low as 1E/sup -16/A/cell at +1.0V. |
| Starting Page | 371 |
| Ending Page | 374 |
| File Size | 1055388 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780392035 |
| DOI | 10.1109/ESSDER.2005.1546662 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-09-16 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Tin Random access memory Dielectric thin films Temperature Leakage current MIM capacitors Sputtering Hafnium oxide Electrodes Semiconductor films |
| Content Type | Text |
| Resource Type | Article |
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