NDLI: High performance device utilizing ultra-thick-strained-Si (UTSS) grown on relaxed SiGe

Content Provider	IEEE Xplore Digital Library
Author	Sun-Ghil Lee Young-Pil Kim Young-Eun Lee Jong-Wook Lee Insoo Jung Deok-Hyung Lee Yong-Hoon Son Sung-Kwan Kang Pilkyu Kang Min-Gu Kang Yu Gyun Shin U-In Chung Joo Tae Moon
Copyright Year	2005
Description	Author affiliation: Samsung Electron. Co., Ltd., Gyeonggi-Do, South Korea (Sun-Ghil Lee; Young-Pil Kim; Young-Eun Lee; Jong-Wook Lee; Insoo Jung; Deok-Hyung Lee; Yong-Hoon Son; Sung-Kwan Kang; Pilkyu Kang; Min-Gu Kang; Yu Gyun Shin; U-In Chung; Joo Tae Moon)
Abstract	We demonstrate a highly manufacturable substrate-induced strained Si device, which is compatible with the conventional Si bulk process. It utilizes ultra-thick-strained Si (UTSS) layer thicker than 3000 /spl Aring/ and relaxed SiGe layer with low Ge content less than 10%. The UTSS n-MOSFET gives 6 /spl sim/ 12% increase in I/sub on/ according to the gate length without the cost of increase in I/sub off/. In addition, more than 5% increase in I/sub on/ for p-MOSFET can be obtained by hybrid stress of UTSS and SiGe source/drain process. We also emphasize the importance of the ratio of channel resistance (R/sub CH/) to source-drain resistance (R/sub SD/) for performance enhancement.
Starting Page	309
Ending Page	312
File Size	397922
Page Count	4
File Format	PDF
ISBN	0780392035
DOI	10.1109/ESSDER.2005.1546647
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-16
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Cascading style sheets MOSFET circuits Stress Costs Fabrication Moon Manufacturing processes Cleaning
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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