NDLI: Cobalt stripping process integration for cobalt salicide residue improvement

Content Provider	IEEE Xplore Digital Library
Author	Ong, M. Ung, W. Chai Chin Chin Seok Sewoon
Copyright Year	2008
Description	Author affiliation: X-FAB Sarawak Sdn. Bhd., Kuching (Ong, M.; Ung, W.; Chai Chin Chin; Seok Sewoon)
Abstract	In 0.11 um and larger technology node non-volatile memory process integration, undesired cobalt salicide residue formation is found to degrade ohmic contact resistant and cause severe yield loss. TiN/Ti/Co stack is applied in the process to get good $CoSi_{2}$ formation. The abnormal salicide residue formation is detected after cobalt stripping process which is applying a two step selective wet etching. First, the wafer is etched in $H_{2}SO_{4}/H_{2}O_{2}$ (SPM), rinsed in de-ionized water and then etched in $NH_{4}OH/H_{2}O_{2}/H_{2}O$ (APM). It was found that the higher concentration of $H_{2}O_{2}$ in the SPM when the SPM life time is getting older caused this abnormal salicide residue formation. This paper presents the detail studies of this residue formation mechanism and works that have been carried out to optimize the selective wet etching process including the SPM & APM process sequence and the etching time. By implementing the optimum selective wet etching condition, we are able to suppress the cobalt salicide residue formation.
Starting Page	609
Ending Page	613
File Size	2618827
Page Count	5
File Format	PDF
ISBN	9781424438730
DOI	10.1109/SMELEC.2008.4770399
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-25
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Cobalt Scanning probe microscopy Tin Wet etching Nonvolatile memory Failure analysis Degradation Ohmic contacts Water Chemicals
Content Type	Text
Resource Type	Article

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