NDLI: Design of a broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique

Content Provider	IEEE Xplore Digital Library
Author	Wu, D.Y.-T. Mkadem, F. Boumaiza, S.
Copyright Year	2010
Description	Author affiliation: University of Waterloo, Ontario, N2L 3G1, Canada (Wu, D.Y.-T.; Mkadem, F.; Boumaiza, S.)
Abstract	A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique (SRFT) is presented. Upon determining the impedances for highest efficiency across the bandwidth of interest, the SRFT is used to obtain the optimal matching topology and element values. The effectiveness of this design technique is illustrated using a commercially available 45W GaN device which achieved an average drain efficiency of 63% from 1.9 GHz to 2.9 GHz (∼42%) with an average output power and gain of 45.8 dBm and 10.8 dB respectively. The PA with DPD yielded ACPR below −50dBc when driven with WCDMA and LTE at 2.14 and 2.6 GHz respectively
Starting Page	1090
Ending Page	1093
File Size	1425354
Page Count	4
File Format	PDF
ISBN	9781424460564
ISSN	0149645X
e-ISBN	9781424460588
e-ISBN	9781424460571
DOI	10.1109/MWSYM.2010.5517636
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Broadband amplifiers High power amplifiers Frequency Impedance Bandwidth Optimal matching Topology Power generation Multiaccess communication high efficiency
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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