NDLI: Channel temperature estimation in GaAs FET devices

Content Provider	IEEE Xplore Digital Library
Author	Fattorini, A.P. Tarazi, J. Mahon, S.J.
Copyright Year	2010
Description	Author affiliation: Mimix Broadband, 80 Mount Street, North Sydney, NSW 2060, Australia (Fattorini, A.P.; Mahon, S.J.) \|\| Department of Physics and Engineering, Macquarie University, NSW 2109, Australia (Tarazi, J.)
Abstract	Operating channel temperature has an important influence on the electrical performance and reliability of GaAs FET amplifiers but this parameter is difficult to determine experimentally or analytically. Simplified closed-form and numerical models are commonly used although both are subject to errors in the case of sub-micron heat sources surrounded by epitaxial layers. Some assumptions about the heat source size and location are explored using finite-difference simulation. A simple measurement technique making use of the temperature coefficient of gate metal resistance is described, and an improved procedure for spatial averaging correction of infrared measurements of sub-micron heat sources is proposed.
Starting Page	320
Ending Page	323
File Size	1453812
Page Count	4
File Format	PDF
ISBN	9781424460564
ISSN	0149645X
e-ISBN	9781424460588
e-ISBN	9781424460571
DOI	10.1109/MWSYM.2010.5518202
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature Gallium arsenide FETs Infrared heating Performance analysis Numerical models Epitaxial layers Finite difference methods Measurement techniques Electrical resistance measurement FET amplifiers Heat flow thermal analysis thermal modeling channel temperature junction temperature temperature measurement infrared measurement
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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