NDLI: A 18.85 mW 20–29 GHz wideband CMOS LNA with 3.85±0.25 dB NF and 18.1±1.9 dB gain

Content Provider	IEEE Xplore Digital Library
Author	Chiu, Yi-Ting Lin, Yo-Sheng Chang, Jin-Fa
Copyright Year	2010
Description	Author affiliation: National Chi Nan University, China (Chiu, Yi-Ting; Lin, Yo-Sheng; Chang, Jin-Fa)
Abstract	A 20–29 GHz wideband CMOS low-noise amplifier (LNA) with flat and low noise figure (NF), flat and high gain (S21), and excellent phase linearity property (group-delay-variation is only ±22.6 ps across the whole band) is demonstrated. To achieve flat and low NF, the size, layout and bias of the input transistor were first optimized for minimum NF, and then the inductance of the input inductors was tuned to obtain a slightly under-damped (flat) NF frequency response. In addition, to achieve flat and high S21 and small group-delay-variation, the inductive-peaking technique was adopted in the current-reused stage for bandwidth enhancement. The LNA consumed 18.85 mW power and achieved flat and low NF of 3.85±0.25 dB, and flat and high S21 of 18.1±1.9 dB over the 20–29 GHz band of interest. These are the best NF and S21 performances ever reported for a 21.65–26.65 GHz or a 22–29 GHz wideband CMOS LNA.
Starting Page	1
Ending Page	1
File Size	63189
Page Count	1
File Format	PDF
ISBN	9781424460564
ISSN	0149645X
e-ISBN	9781424460588
e-ISBN	9781424460571
DOI	10.1109/MWSYM.2010.5517216
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wideband Noise measurement Gain Low-noise amplifiers Noise figure Linearity Inductance Inductors Frequency response Bandwidth
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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