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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Arnous, M.T. Bathich, K. Preis, S. Gruner, D. Boeck, G. |
| Copyright Year | 2012 |
| Description | Author affiliation: Microwave Engineering Laboratory, Berlin Institute of Technology Einsteinufer 25, 10587 Berlin, Germany (Arnous, M.T.; Bathich, K.; Preis, S.; Gruner, D.; Boeck, G.) |
| Abstract | In this contribution, the design, implementation, and experimental results of a high-efficiency broadband GaN HEMT power amplifier are presented. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design bandwidth. A systematic approach was applied for the design of wideband output and input matching networks. Continuous wave (CW) large-signal measurement results showed that across 1.1–2.0 GHz (58 % bandwidth), the output power was higher than 110 W, and 50–72% drain efficiency was achieved. Over the octave bandwidth of 1.0–2.0 GHz, at least 84 W output power was measured. The power gain was around 12 dB. An ACLR of −45 dBc was measured for an LTE signal at 42 dBm average output power under additional digital predistortion (DPD). |
| Starting Page | 289 |
| Ending Page | 292 |
| File Size | 435220 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781457714351 |
| e-ISBN | 9781457714382 |
| DOI | 10.1109/MIKON.2012.6233537 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-05-21 |
| Publisher Place | Poland |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Power amplifiers Bandwidth Power measurement Power generation Decision support systems Broadband amplifiers matching network broadband power amplifier gallium nitride HEMT load-pull analysis |
| Content Type | Text |
| Resource Type | Article |
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