NDLI: DARPA's GaN technology thrust

Content Provider	IEEE Xplore Digital Library
Author	Rosker, M.J. Albrecht, J.D. Cohen, E. Hodiak, J. Chang, T.-H.
Copyright Year	2010
Description	Author affiliation: Defense Advanced Research Projects Agency, 3701 North Fairfax Drive, Arlington, VA 22203-1714, USA (Rosker, M.J.; Albrecht, J.D.) \|\| EBCO Technology Advising, Inc., 11312 Freas Drive, North Potomac, MD 20878, USA (Cohen, E.) \|\| Booz Allen Hamilton Inc., 3811 North Fairfax Drive, Arlington, VA 22203-1707, USA (Hodiak, J.; Chang, T.-H.)
Abstract	DARPA/MTO has sponsored III-N electronics programs to combine associated high intrinsic breakdown voltages, high electron saturation velocities, and large sheet carrier densities. The WBGS-RF program has developed GaN HEMTs for high power RF electronics resulting in sufficiently mature transistors to confidently predict > 10E6 hours of MTTF for up to 40GHz power device operation. The latest NEXT program further pushes III-N-based HEMTs toward its frequency (size) scaling limits by simultaneously minimizing carrier transit time, maximizing electron density, and reducing access resistances with innovative epitaxial structures and dielectric heterointerfaces. The goals of the Phase I of NEXT project are to demonstrate 300 GHz D-mode and 200 GHz E-mode HEMTs while maintaining the breakdown voltage and transistor cutoff frequency product ≥ 5 THz●Volt. The final goal of the NEXT program is to enable 1000-transistor, high-yield, 500 GHz E/D-mode GaN technology for mixed signal applications.
Starting Page	1214
Ending Page	1217
File Size	821567
Page Count	4
File Format	PDF
ISBN	9781424460564
ISSN	0149645X
e-ISBN	9781424460588
e-ISBN	9781424460571
DOI	10.1109/MWSYM.2010.5514755
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-05-23
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Space technology HEMTs MODFETs Radio frequency Transistors Breakdown voltage Electrons High power amplifiers Conducting materials high electron mobility transistor Gallium Nitride
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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