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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zihui Zhang Arnous, M.T. Boeck, G. |
| Copyright Year | 2015 |
| Description | Author affiliation: Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany (Zihui Zhang; Arnous, M.T.; Boeck, G.) |
| Abstract | In this work, the design concept of a highly efficient and ultra-broadband GaN power amplifier is presented. The amplifier uses a novel concept for realizing the impedance matching networks with multi octave bandwidth. These matching networks are based on planar, broadside coupled micro-strip lines that are interconnected to a 4:1 Guanella impedance transformer. To achieve an even mode impedance as high as possible, the ground metallization underneath the coupled lines is removed. A high even mode impedance is the key for achieving wide bandwidth. The designed amplifier, deploying a commercial 25 W GaN HEMT from CREE™ achieved a CW output power of more than 42 dBm over a frequency range from 0.4 to 2.8 GHz with a minimum PAE of 45% over the whole bandwidth and peak PAE-values of more than 65%. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 927319 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467378802 |
| ISSN | 21612064 |
| DOI | 10.1109/ICTON.2015.7193471 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-07-05 |
| Publisher Place | Hungary |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Impedance Power amplifiers Bandwidth Impedance matching Microwave amplifiers Microwave circuits transformers broadband amplifiers coupling circuits gallium nitride Guanella HEMTs high efficiency impedance matching power amplifiers |
| Content Type | Text |
| Resource Type | Article |
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