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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Husein, I.F. YuanZhong Zhou Chung Chan |
| Copyright Year | 1996 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA (Husein, I.F.) |
| Abstract | Summary form only given, as follows. The anodic vacuum are was used to deposit thin carbon films (a-C) on Si substrates. The arc produces a partially ionized carbon vapor plasma (less than 20% ionized) and is sustained by a consumable anode. Films with thickness around 0.8-1.7 /spl mu/m were deposited with a deposition rate of 0.5 /spl mu/m/min. The a-C films were modified by nitrogen plasma immersion ion implantation (PIII). The effects of nitrogen implantation on the structure and characteristics of the a-C films were investigated by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and surface energy calculations from the contact angle measurements. XPS C 1s and N 1s spectra suggest a possible formation of covalent carbon-nitrogen bonds. The a-C films Raman spectra have a G band at 1577 cm/sup -1/ and a D band at 1350 cm/sup -l/, while the implanted films show a broad asymmetric peak around 1500 cm/sup -1/. Surface energy analysis indicates that the nitrogen implanted films have lower interfacial tension with the silicon substrate. |
| File Size | 141164 |
| File Format | |
| ISBN | 0780333225 |
| ISSN | 07309244 |
| DOI | 10.1109/PLASMA.1996.550748 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1996-06-03 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Vacuum arcs Nitrogen Spectroscopy Semiconductor films Plasma immersion ion implantation Raman scattering Plasma properties Anodes Energy measurement Plasma measurements |
| Content Type | Text |
| Resource Type | Article |
| Subject | Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering |
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