NDLI: Examination of the effects of aluminum contamination for PSII fabricated diodes

Content Provider	IEEE Xplore Digital Library
Author	Speth, R.R. Shohet, J.L. Booske, J.H. Gearhart, S.S. Liu, H. Mau, R.
Copyright Year	1996
Description	Author affiliation: Eng. Res. Center for Plasma-Aided Manuf., Wisconsin Univ., Madison, WI, USA (Speth, R.R.)
Abstract	Summary form only given. Plasma Source Ion Implantation (PSII) has long been regarded as a possible alternative to classical ion implantation. The benefits of PSII, such as low energy high dose implants and its comparatively small footprint, become increasingly tempting for integrated circuit fabrication as device dimensions shrink. An open question concerns the effect of plasma-sputtered contaminant ions on device characteristics. To address the contamination issue, a suite of experiments is currently underway which will quantify the allowable level of contamination in a diode array. The array of diodes is fabricated on 3 inch N type <100> P-doped silicon wafers. The processing of the wafers is standard except for the implantation step. The implantation step occurs just after the oxide etch, and includes both the implantation of the boron ions as well as the contaminant ions. In every case the energies of both ions will be the same to simulate the conditions found within the PSII chamber. The implantation process will utilize controlled ion beam implants to introduce measured quantities of both the boron and contaminant ions. As a result, control of the absolute, as well as the relative dose of the impurities can be achieved. The first contaminant to be studied is aluminum since it represents a preferred material for constructing PSII chambers, and it is expected that aluminum will be sputtered from the chamber walls. The experiment is a 2/sup 3/ factorial design varying implant energy, aluminum concentration and and their effects on the performance of test diodes of various dimensions. The measured responses are ideality factor, breakdown voltage and reverse bias leakage current.
File Size	120103
File Format	PDF
ISBN	0780333225
ISSN	07309244
DOI	10.1109/PLASMA.1996.550719
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum Contamination Implants Diodes Plasma sources Ion implantation Boron Pollution measurement Fabrication Plasma applications
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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