NDLI: Plasma purification by ion cyclotron resonance for plasma source ion implantation doping of semiconductors

Content Provider	IEEE Xplore Digital Library
Author	Snodgrass, T.G. Baum, C.C. Stewart, R.A. Shohet, J.L. Kushner, M.J. Booske, J.H.
Copyright Year	1996
Description	Author affiliation: Eng. Res. Center for Plasma-Aided Manuf., Wisconsin Univ., Madison, WI, USA (Snodgrass, T.G.)
Abstract	Summary form only given. Using Plasma Source Ion Implantation (PSII) to create the shallow source and drain structures required for next generation devices may be a necessity. A critical concern for the use of PSII in doping these next generation semiconductor devices is to avoid implanting contaminant ions. For example, future devices are predicted to require that heavy metal doses be kept less than 3/spl times/10/sup 9/ atoms per square centimeters. When doping semiconductors using conventional beam line accelerator technology, the implantation is very pure because bending the beam with a magnetic field very efficiently selects a single mass species. In order to provide a similar purity implantation for PSII a process utilizing ion cyclotron resonance for plasma purification prior to implantation is being investigated. In order to purify the plasma a DC magnetic field is imposed in the plasma and an RF electric field is imposed perpendicular to the magnetic field. If the frequency of the RF electric field is selected to be at the cyclotron frequency of a contaminant ion, the contaminant ion will gain energy efficiently and be diffused out of the plasma faster than noncontaminant ions, and its increased diffusion rate will be primarily perpendicular to the magnetic field. Once a contaminant ion is expelled from the plasma it is neutralized upon collision with a wall and is no longer an implantation hazard. We present simulation results showing necessary field strengths and uniformity for plasma purification, cleaning efficiency of the described system, and frequency/mass resolution of the method.
Starting Page	170
Ending Page	171
File Size	215386
Page Count	2
File Format	PDF
ISBN	0780333225
ISSN	07309244
DOI	10.1109/PLASMA.1996.550720
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1996-06-03
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma sources Purification Cyclotrons Resonance Plasma immersion ion implantation Magnetic fields Plasma simulation Frequency Semiconductor device doping Particle beams
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Electrical and Electronic Engineering

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