NDLI: Photoluminescence behaviour of GaInNAs quantum wells annealed at high temperature

Content Provider	IEEE Xplore Digital Library
Author	Ng, T.K. Yoon, S.F. Wang, S.Z. Loke, W.K. Fan, W.J. Yew, K.C. Sun, Z.Z.
Copyright Year	2002
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore (Ng, T.K.; Yoon, S.F.; Wang, S.Z.; Loke, W.K.; Fan, W.J.; Yew, K.C.; Sun, Z.Z.)
Abstract	The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high temperature post-growth annealing were studied. The QWs were grown using a radio frequency (RF) nitrogen plasma source in conjunction with a solid source molecular beam epitaxy (SSMBE) system. It is found that annealing at high temperature (840/spl deg/C) and long duration (10 min) results in significant improvement in the PL characteristics of the GaInNAs QWs. The PL intensity of the GaInNAs QW could improve by as much as 30 times after annealing, and its full-width-at-half-maximum (FWHM) reduces from 63.1 meV to a small value of 16.3 meV after annealing. There are two blueshift regions in the wavelength shift vs. nitrogen composition curve that shows the GaInNAs PL blueshift after annealing as a function of nitrogen composition. For as-grown GaInNAs QWs with a low nitrogen composition of less than /spl sim/1% (Region A), increasing indium composition from 22% to 30% during growth results in an increase of PL blueshift (after annealing) from 72 nm to 87 nm. On the other hand, for the as-grown GaInNAs QWs having higher nitrogen compositions of /spl sim/1% to /spl sim/3% (Region B), indium compositions (within the range of 19.5% and 25%) was found to have insignificant effect on the PL blueshift. In fact, the PL blueshift (as a result of annealing) increases rapidly from 72 nm to /spl sim/200 nm. The dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs are proposed based on the PL, X-ray diffraction (XRD) and reflection high electron energy diffraction (RHEED) observations. The investigation has important implications for the growth of GaInNAs-based laser emitting at 1.31 /spl mu/m wavelength.
Sponsorship	IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc
Starting Page	543
Ending Page	546
File Size	293797
Page Count	4
File Format	PDF
ISBN	0780373200
ISSN	10928669
DOI	10.1109/ICIPRM.2002.1014486
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photoluminescence Annealing Nitrogen Plasma temperature Radio frequency Indium X-ray diffraction Plasma sources Solids Molecular beam epitaxial growth
Content Type	Text
Resource Type	Article

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