NDLI: Temperature dependence of eigen-energies observed in optical transmittance of doped and undoped InGaAs/InAlAs MQWs

Content Provider	IEEE Xplore Digital Library
Author	Tanoue, Y. Tanaka, K. Kawano, T. Shibata, K. Kotera, N. Nakamura, H. Washima, M. Matsui, M.
Copyright Year	2002
Description	Author affiliation: Kyushu Inst. of Technol., Iizuka City, Japan (Tanoue, Y.; Tanaka, K.; Kawano, T.; Shibata, K.; Kotera, N.)
Abstract	Energies of interband optical transition in InGaAs/InAlAs multi-quantum well (MQW) structures were studied using one undoped and two n-type modulation-doped specimens grown by MBE. Step-like allowed transitions were observed and identified between 120 K and 330 K. In a 10 nm-thick quantum well (QW), three typical eigen states of the conduction subband (CS) were discriminated in a 0.52 eV range of energy in the QW. Doped and undoped MQW specimens had almost the same transition energies from the valence subband to the CSs. In a highly doped specimen of 1.5/spl times/10/sup 12/ cm/sup -2/ electrons per QW, the inter-ground-state optical transition was prohibited by the band filling effect. In the low doped specimen of 5/spl times/10/sup 11/ cm/sup -2/ electrons per QW, however, the same transition below the Fermi energy level was observed at 120 K. Moreover, localized states or an impurity band with an activation energy of 25 meV associated with the ground and the second higher CSs, were observed. No localized state was observed in the undoped ones.
Sponsorship	IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc
Starting Page	499
Ending Page	502
File Size	382651
Page Count	4
File Format	PDF
ISBN	0780373200
ISSN	10928669
DOI	10.1109/ICIPRM.2002.1014477
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature dependence Indium gallium arsenide Indium compounds Quantum well devices Optical modulation Cascading style sheets Epitaxial layers Electron optics Filling Energy states
Content Type	Text
Resource Type	Article

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