NDLI: High reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP substrates

Content Provider	IEEE Xplore Digital Library
Author	Chou, Y.C. Leung, D. Lai, R. Grundbacher, R. Barsky, M. Tsai, R. Eng, D. Wojtowicz, M. Nishimoto, M. Liu, P.H. Oki, A. Streit, D.
Copyright Year	2002
Description	Author affiliation: Space & Electron. Eng. Microelectron. Products & Processes, TRW Inc., Redondo Beach, CA, USA (Chou, Y.C.; Leung, D.; Lai, R.; Grundbacher, R.; Barsky, M.; Tsai, R.; Eng, D.; Wojtowicz, M.; Nishimoto, M.; Liu, P.H.; Oki, A.; Streit, D.)
Abstract	The high-reliability performance of G-band (180 GHz) MMIC amplifiers fabricated using 0.07 pm T-gate pseudomorphic InGaAs/InAlAs/InP HEMTs on 3-inch wafers is reported. Low noise amplifiers were life-tested at two-temperatures (T/sub 1/ = 200/spl deg/C and T/sub 2/ = 215/spl deg/C) and stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2/spl times/10/sup 6/ hours at a channel temperature of 125/spl deg/C. MTTF was determined by 2-temperature constant current stress using \|/spl Delta/G/sub mp/\| > 20% as the failure criteria. This is the first demonstration of the high reliability of 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT MMICs on a 3-inch InP production process. This result demonstrates a robust 0.07 /spl mu/m pseudomorphic InGaAs/InAlAs/InP HEMT production technology for G-band applications.
Sponsorship	IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc
Starting Page	365
Ending Page	368
File Size	366623
Page Count	4
File Format	PDF
ISBN	0780373200
ISSN	10928669
DOI	10.1109/ICIPRM.2002.1014426
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Indium gallium arsenide Indium compounds HEMTs MMICs Production Low-noise amplifiers Temperature Stress Robustness
Content Type	Text
Resource Type	Article

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