NDLI: Rapid P-injection in-situ synthesis and growth large diameter LEC InP single crystal

Content Provider	IEEE Xplore Digital Library
Author	Niefeng Sun Xiawan Wu Youwen Zhao Nengjue Shen Xudong Chen Chaoguang Pu Keyun Bi Guangyao Yang Yongqiang Xu Kewu Yang Zhengping Zhao Tongnian Sun Weilian Guo Lanying Lin Liang Wang Quan Zhao Yan Huang Beling, C.D. Fung, S.
Copyright Year	2002
Description	Author affiliation: Hebei Semicond. Res. Inst., China (Niefeng Sun)
Abstract	High purity InP is necessary for the preparation of high quality InP single crystal especially low Fe content semi-insulating and annealed undoped semi-insulating InP single crystal. In-situ phosphorus injection synthesis of InP has several advantages over the two-step process of compounding and growing in separate furnace. In 1982 it was reported by our group that around 500g InP was synthesized and semi-insulating InP single crystals grown in one step in 30-60 minutes. A large high pressure puller have been set up, which can be used to synthesize and grow large diameter InP single crystal in our laboratory. Now 3400g InP can be synthesized reproducible and single crystals can be grown in the puller. The red phosphorus used for synthesis is contained in two vessels, which can be manipulated separately during the synthesis process. The two phosphorus vessels are heated by the auxiliary heater and the phosphorus vapour is injected into the indium melt in the crucible. We have developed a process for the rapid synthesis of InP. The whole synthesis process only needs 60-70 minutes. The synthesized InP could be indium-rich, stoichiometric or phosphorus-rich which depend on the quantity of excess phosphorus and other conditions such as the temperature of indium melt in the crucible, the thermal field, phosphorus injection speed etc. After the synthesis, InP crystal can be pulled by the conventional LEC method. Twin-free 3-inch and 4-inch <100> InP single crystal can be obtained. The InP single crystal wafer is cut from the ingot for the measurement of electronic parameters. The carrier concentration of P-injection in-situ synthesis InP at T = 300 K is n = 2 /spl times/ 10/sup 15/ - 10/sup 16/ cm/sup -3/, the mobility is 3500 4900 cm/sup 2//Vs. These depend on the raw materials used. At T = 77 K the best result n = 2.36 /spl times/ 10/sup 15/ cm/sup -3/, the mobility is 4.8 /spl times/ 10/sup 4/ cm/sup 2//Vs. This kind of InP can be made semi-insulating with high temperature annealing or low iron doping levels.
Sponsorship	IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc
Starting Page	401
Ending Page	404
File Size	324478
Page Count	4
File Format	PDF
ISBN	0780373200
ISSN	10928669
DOI	10.1109/ICIPRM.2002.1014452
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Iron Annealing Crystals Furnaces Laboratories Temperature dependence Rapid thermal processing Raw materials Doping
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Growth of large diameter InP single crystals by the phosphorus vapor controlled LEC method

VGF crystal growth and vapor-phase Fe doping technologies for semi-insulating 100 mm diameter InP substrates

In-situ synthesis and crystal growth of high purity InP

Iron segregation in LEC InP crystals

Effect of growth conditions on thermal stress development in high pressure LEC grown InP crystals

Modelling of dislocation generation in InP crystal growth

Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

Horizontal gradient-freeze growth of InP crystals under controlled pressure

Growth of indium phosphide bulk crystals for radiation detectors

Rapid P-injection in-situ synthesis and growth large diameter LEC InP single crystal

Similar Documents

Growth of large diameter InP single crystals by the phosphorus vapor controlled LEC method

VGF crystal growth and vapor-phase Fe doping technologies for semi-insulating 100 mm diameter InP substrates

In-situ synthesis and crystal growth of high purity InP

Iron segregation in LEC InP crystals

Effect of growth conditions on thermal stress development in high pressure LEC grown InP crystals

Modelling of dislocation generation in InP crystal growth

Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

Horizontal gradient-freeze growth of InP crystals under controlled pressure

Growth of indium phosphide bulk crystals for radiation detectors

Rapid P-injection in-situ synthesis and growth large diameter LEC InP single crystal