NDLI: On the luminescence and structural properties of GaInNAs lattice matched to GaAs

Content Provider	IEEE Xplore Digital Library
Author	Pavelescu, E.-M. Gheorghiu, A. Baltateanu, N. Konttinen, J. Cimpoca, V. Pessa, M.
Copyright Year	2005
Description	Author affiliation: Optoelectron. Res. Centre, Tampere Univ. of Technol. (Pavelescu, E.-M.; Gheorghiu, A.; Baltateanu, N.; Konttinen, J.; Cimpoca, V.; Pessa, M.)
Abstract	We have investigated the luminescence and structural properties of as-grown and thermally annealed lattice-matched GaInNAs-on-GaAs epilayer, grown by molecular-beam epitaxy. The study has been done by means of photoluminescence (PL) in conjunction with Raman spectroscopy and X-ray diffraction measurements. We have found that besides the near band-edge PL emission a broad emission band can be seen in longer wavelengths in 9-K PL. The broad PL band is related to presence of nitrogen into lattice likely involving a N-related defect Raman spectroscopy showed that nitrogen appears to be mainly located on substitutional sites in "short-range-order clusters" as $N-Ga_{4}$ and to a lesser extent as $N-Ga_{3}In$ clusters". There were also been indications of presence of off-substitutional nitrogen. Post-growth thermal annealing has been seen to remarkably enhance and to blue shift the near band-edge PL. At the same time the broad PL band has only slightly decreased without any spectral shift. The blue is mainly due to formation of In-N bonds. Electron irradiation applied prior to annealing has promoted a further enhancement in the near-band edge PL and substantially decreased the broad PL band
Starting Page	297
Ending Page	300
File Size	849582
Page Count	4
File Format	PDF
ISBN	0780392140
DOI	10.1109/SMICND.2005.1558783
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-03
Publisher Place	Romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Luminescence Lattices Gallium arsenide Annealing Nitrogen Raman scattering Spectroscopy Molecular beam epitaxial growth Photoluminescence X-ray diffraction
Content Type	Text
Resource Type	Article

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