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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Maclean, J.O. Simons, A.J. Houlton, M.R. Martin, T. Birbeck, J. |
| Copyright Year | 2002 |
| Description | Author affiliation: Malvern Technol. Centre, QinetiQ Ltd., Malvern, UK (Maclean, J.O.; Simons, A.J.; Houlton, M.R.; Martin, T.; Birbeck, J.) |
| Abstract | There is significant commercial interest in 1.3 /spl mu/m dilute nitride-based laser devices. Such devices rely on low concentrations of nonradiative centres in the active region in order to achieve the predicted high performances. Unintentional oxygen contamination in alkyl precursors used in the epitaxy is a source of nonradiative centres. An investigation of the Secondary Ion Mass Spectrometry (SIMS) relative sensitivity factor (RSF) for oxygen in Al/sub 0.3/Ga/sub 0.7/N/sub y/As/sub (1-y)/ was made in order to calibrate and compare background oxygen impurities in 3 different precursor batches of dimethylhydrazine (DMHy). A DMHy batch was identified which gave background oxygen concentrations in Al-containing layers below the SIMS detection limit (2-8E16 cm/sup -3/) with 0.2% nitrogen content. Therefore, providing that suitable growth conditions are chosen such that nonradiative centres other than oxygen do not form, this DMHy precursor batch is expected to give In/sub x/Ga/sub (1-x)/N/sub 0.002/As/sub 0.998/ quantum wells with good luminescence properties. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc |
| Starting Page | 261 |
| Ending Page | 263 |
| File Size | 291191 |
| Page Count | 3 |
| File Format | |
| ISBN | 0780373200 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2002.1014355 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-05-12 |
| Publisher Place | Sweden |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Calibration Oxygen Vertical cavity surface emitting lasers Pollution measurement Surface emitting lasers Epitaxial growth Nitrogen Contamination Chemical lasers Gallium arsenide |
| Content Type | Text |
| Resource Type | Article |
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