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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sahr, U. Muller, G. |
| Copyright Year | 2002 |
| Description | Author affiliation: Crystal Growth Lab., Erlangen-Nurnberg Univ., Erlangen, Germany (Sahr, U.; Muller, G.) |
| Abstract | S-doped InP crystals were grown in a VGF furnace. The substrates, cut from the seed, middle and tail portions of the ingot, were investigated by Hall-measurement, photoluminescence spectroscopy and topography. The photoluminescence intensity across the wafer area is very homogeneous, with an average standard deviation of 6% only. The carrier concentration is measured by evaluating the position of the high-energy cut-off of the band-to-band luminescence. The optical data satisfactorily correlate with Hall measurements. |
| Sponsorship | IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc |
| Starting Page | 405 |
| Ending Page | 408 |
| File Size | 407867 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780373200 |
| ISSN | 10928669 |
| DOI | 10.1109/ICIPRM.2002.1014453 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-05-12 |
| Publisher Place | Sweden |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photoluminescence Surfaces Indium phosphide Crystals Furnaces Silicon compounds Crystalline materials Sections Insulation Space heating |
| Content Type | Text |
| Resource Type | Article |
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