NDLI: InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain

Content Provider	IEEE Xplore Digital Library
Author	Yan, B.P. Hsu, C.C. Wang, X.Q. Bai, Y.K. Yang, E.S.
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. & Electron. Eng., Hong Kong Univ., China (Yan, B.P.)
Abstract	An InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. It features the use of a fully strained pseudomorphic GaAsSb (Sb composition: 10.4%) as the base layer and an InGaP layer as the emitter, which both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. A current gain of 200 has been obtained from the InGaP/GaAsSb/GaAs DHBT, which is the highest value obtained from GaAsSb base GaAs-based HBTs. The turn-on voltage of the device is typically 0.914 V for the 10.4% Sb composition, which is 0.176 V lower than that of traditional InGaP/GaAs HBT. The results show that GaAsSb is a suitable base material for reducing the turn-on voltage of GaAs HBTs.
Sponsorship	IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc
Starting Page	169
Ending Page	172
File Size	289586
Page Count	4
File Format	PDF
ISBN	0780373200
ISSN	10928669
DOI	10.1109/ICIPRM.2002.1014291
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Double heterojunction bipolar transistors Low voltage Heterojunction bipolar transistors Current density Power dissipation Conducting materials Photonic band gap Fabrication Radiative recombination
Content Type	Text
Resource Type	Article

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