NDLI: InP/InGaAs-based metamorphic HBT material grown in multi-wafer production MBE system

Content Provider	IEEE Xplore Digital Library
Author	Bove, P. Lahreche, H. Langer, R.
Copyright Year	2002
Description	Author affiliation: Picogiga, Parc De Villejust, France (Bove, P.; Lahreche, H.; Langer, R.)
Abstract	The InP-based materials system with InGaAs is recognized as having one of the best potential for high speed HBTs. InP/InGaAs SHBTs have demonstrated good cut-off frequencies but suffer from low breakdown voltage because of the narrow InGaAs collector energy gap. The use of InP collector in DHBTs enhances breakdown voltage by reducing impact ionisation in the collector layer. The high cost of InP substrate and the lack of 6 inch diameter limit the large volume production of InP-based devices (especially for 6 inch fab users). Using GaAs substrates with a metamorphic buffer layer allows one to reduce the cost of the epi-wafer. Moreover, DHBT structures were grown on 4-inch GaAs substrates in a production environment on a multi-wafer MBE machine. The active layers are grown on 1 mm-thick InAlAs graded buffer that matches the lattice parameter constant to InP. Optimisation of the buffer was performed to reduce both the dislocation density and the RMS surface roughness. The device structure includes a 80 nm-thick Be-doped base layer with sheet resistance of 860 ohm/sq. Preliminary results on large area device shows common-emitter current gain /spl beta/ = 100-110 and high breakdown voltage BVceo > 9 V. These results are approaching those published on InP substrates attesting for the high quality of the metamorphic buffer layer.
Sponsorship	IEEE Electron Devices Soc. IEEE Lasers & Electro-Opt. Soc
Starting Page	611
Ending Page	614
File Size	380136
Page Count	4
File Format	PDF
ISBN	0780373200
ISSN	10928669
DOI	10.1109/ICIPRM.2002.1014502
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-05-12
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Heterojunction bipolar transistors Production systems Indium gallium arsenide Double heterojunction bipolar transistors Costs Gallium arsenide Buffer layers Cutoff frequency Impact ionization
Content Type	Text
Resource Type	Article

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