NDLI: A novel MEMS silicon probe card

Content Provider	IEEE Xplore Digital Library
Author	Bong-Hwan Kim Sangjun Park Byeungleul Lee Jong-Ho Lee Bong-Gi Min Soon-Don Choi Dong-il Cho Kukjin Chun
Copyright Year	2002
Description	Author affiliation: Sch. of Electr. Eng., Seoul Nat. Univ., South Korea (Bong-Hwan Kim)
Abstract	We have developed a novel cantilever-type probe which is capable of less than 70 of pitch and 12g of force. This probe is suitable for wafer-level burn-in testing, function testing and circuit-board O/S testing including memory and RF devices. The probe was fabricated with epitaxial polysilicon on silicon substrate. The through via hole interconnection was formed in silicon wafer by nickel electroless plating and copper electroplating. The electroless plating is easy method and can deposit film uniformly for deep trench and through hole. Especially, it can deposit film on any substrates without seed layer and allow it to be electroplated. The aspect ratio of through via hole was larger than 10:1 and the contact resistance was less than 1 ohm.
Sponsorship	IEEE
Starting Page	368
Ending Page	371
File Size	436157
Page Count	4
File Format	PDF
ISBN	0780371852
ISSN	10846999
DOI	10.1109/MEMSYS.2002.984279
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-01-24
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Silicon Probes Circuit testing Substrates Radio frequency Integrated circuit interconnections Nickel Copper Contact resistance
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering

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