NDLI: Reliability improvement in low loop nailhead wirebonding for long Au wire in a high stress encapsulant material

Content Provider	IEEE Xplore Digital Library
Author	Yahya, A.K. Lim Huey Ling Toh Ling Hoe
Copyright Year	2004
Description	Author affiliation: OSRAM Opto Semicond. Sdn. Bhd., Penang, Malaysia (Yahya, A.K.; Lim Huey Ling; Toh Ling Hoe)
Abstract	There has been many innovations and technological advancement in the gold wire bond for semiconductor applications in recent years. The development of several categories and types of gold wire was triggered by the various needs of the end users in this industry. The right selection of wire for low loop bonding of long wire bond is critical to meet the final product quality and reliability requirement. Coupled with the product needs for a special but high CTE encapsulation material, the resultant stresses on the wire in a complete package and at elevated condition has dampened the wire bond reliability performance. In this detail study, the influence of the wire properties, the wire bond parameters, and the wire loop profile were analyzed and reviewed. To achieve the desired low loop wire height for such long wire length, two wire types with low HAZ, high tensile strength, suitable hardness and elongation properties were choosen for the initial evaluation. The result revealed that the wire with an assumed better control in dopant and drawing process has produced smaller process variation sigma in almost all of the performed quality tests. The next step was to study the influence of the HAZ length and the loop bending point on the product reliability. In this study, the HAZ length was maintained and the loop bending points were varied. In addition, a suitable wire bond capilary movement was established to achieve the desired loop height. The reliability screening test revealed that the units with low bending point within the HAZ length failed at early readouts. The separation was due to the grain boundary stress in the larger grain size at the beginning of the HAZ length. In conclusion, the reliability of long and low loop Au wire in high stress encapsulant material can be achieved by the proper selection of the wire type, wire bonding parameters, and loop profile with relation to the HAZ length.
Starting Page	707
Ending Page	710
File Size	347775
Page Count	4
File Format	PDF
ISBN	0780388216
DOI	10.1109/EPTC.2004.1396699
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-12-08
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Materials reliability Gold Wire Stress Bonding Testing Semiconductor materials Technological innovation Encapsulation Packaging
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Wire Bonding Improvement through Optimal Bonding Tools and Materials Selection

An Investigation on Heat Affected Zone for Au Wire/Cu Wire and Advanced Finite Element Wirebonding Model

High reliability encapsulant liquid resin for SIP

Stacked wire interconnect technology — Cu wire on Au bump bonding methodology

Chip on tape qualification and reliability

Cu wire bonding: Reliability improvement for high temperature in plastic packages

Characteristic of Heat Affected Zone for Ultra Thin Gold Wire/Copper Wire and Advanced Finite Element Wirebonding Model

Gold Wire Bonding Induced Peeling in Cu/Low-k Interconnects: 3D Simulation and Correlations

Copper wire reliability and bonding integrity robustness on cratering sensitive bond pad structure

Reliability improvement in low loop nailhead wirebonding for long Au wire in a high stress encapsulant material

Similar Documents

Wire Bonding Improvement through Optimal Bonding Tools and Materials Selection

An Investigation on Heat Affected Zone for Au Wire/Cu Wire and Advanced Finite Element Wirebonding Model

High reliability encapsulant liquid resin for SIP

Stacked wire interconnect technology — Cu wire on Au bump bonding methodology

Chip on tape qualification and reliability

Cu wire bonding: Reliability improvement for high temperature in plastic packages

Characteristic of Heat Affected Zone for Ultra Thin Gold Wire/Copper Wire and Advanced Finite Element Wirebonding Model

Gold Wire Bonding Induced Peeling in Cu/Low-k Interconnects: 3D Simulation and Correlations

Copper wire reliability and bonding integrity robustness on cratering sensitive bond pad structure

Reliability improvement in low loop nailhead wirebonding for long Au wire in a high stress encapsulant material