NDLI: Research on wafer scale bonding method based on gold-tin eutectic solders [MEMS packaging]

Content Provider	IEEE Xplore Digital Library
Author	Sihai Chen Mingxiang Chen Xinjian Yi Honghai Zhang Sheng Liu
Copyright Year	2003
Description	Author affiliation: Inst. of Microsystems, Huazhong Univ. of Sci. & Technol., Wuhan, China (Sihai Chen; Mingxiang Chen; Xinjian Yi; Honghai Zhang; Sheng Liu)
Abstract	This paper presents the preliminary results for an on-going program in wafer-level MEMS packaging. In this particular paper, two classes of samples by reactive ion sputtering technique were presented. The first one was first sputtered with nickel/chromium (Ni/Cr) alloy and then sputtered with gold (Au) metal as bonding material; the second one was sputtered with Cr, tin (Sn) and Au respectively as bonding material. The bonding of the former sample based on Ni/Cr and Au material heating failed in most areas of the wafers. The eutectic bonding experiment of the later sample, based on Cr, Sn and Au material heating by a global heating method was completed in an annealing oven at a temperature of about 350/spl deg/C, and the heating time was three minutes. The testing results showed the eutectic bonding of Au-Sn by global heating was successful in most areas.
Sponsorship	Chinese Inst. of Electron
Starting Page	187
Ending Page	189
File Size	286956
Page Count	3
File Format	PDF
ISBN	0780381688
DOI	10.1109/EPTC.2003.1298722
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-10-28
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Wafer bonding Micromechanical devices Packaging Chromium Gold Heating Nickel Tin Wafer scale integration Inorganic materials
Content Type	Text
Resource Type	Article

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